Indian Institute of Technology Kharagpur

Chinmay Kumar Maiti

Ph.D.(IIT Kharagpur)

Professor, Electronics & Electrical Communication Engineering
C K Maiti joined the Institute in 1984

Contact Addresses

Residence	A-65, IIT Campus, Kharagpur 721302
Phone (office)	+91 - 3222 - 283532
Phone (residence)	+91 - 3222 - 283533 (IIT Phone) +91 - 3222 - 277681 (Private Phone)
email	ckm @ ece.iitkgp.ernet.in
More Information	http://www.ecdept.iitkgp.ernet.in/index.php/home/faculty/ckm

Research Areas

Microelectronics
Silicon Heterostructures
Online Laboratories
High-k Gate dielectrics
Memristors
Protein Electronics
Technology CAD
Graphene Electronics

Awards & Honours

IETE Industry Award for Best Paper (1997)

Fellow

Fellow, West Bengal Academy of Science and Technology

Member of Professional Bodies

Senior Member : IEEE

Current Sponsored Projects

Project Title : Remote Triggered Laboratories
Principal Investigator : C S Kumar/C K Maiti
Sponsor : MHRD
Project Title : Degradation and Breakdown of Metal gate/High-k/III-V Semiconductor Structures
Principal Investigator : C K Maiti
Co-Principal-Investigators : AS Dhar
Sponsor : DST New Delhi
Project Title : Microelectronics and VLSI Engineering Online Laboratory
Principal Investigator : C K Maiti
Co-Principal-Investigators : AS Dhar
Sponsor : MHRD
Project Title : Technology CAD (TCAD) Online Laboratory
Principal Investigator : C K Maiti
Co-Principal-Investigators : AS Dhar
Sponsor : MHRD
Project Title : Iron Disilicide Heterojunction Solar Cells
Principal Investigator : C K Maiti
Co-Principal-Investigators : A S Dhar
Sponsor : DST

Member, Editorial Board

Guest Editor : Solid-State Electronics
Guest Editor : Solid-State Electronics
Member : iJOE

Publications: 2012 - 2013

Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors by C. Mukherjee, S. Sengupta, C. K. Maiti, and T. K. Maiti J. Appl. Phys., vol. 111, pp. 104507 (2012)
Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers by S. Mallik, C. Mukherjee, C. Mahata, M. K. Hota, C. K. Maiti, C. K. Sarkar, G. K. Dalapati, H. GaO, M. K. Kumar and D. Z. Chi Thin Solid films, vol. 522, pp. 267– (2012)
Bipolar Resistive Switching in Al/HfO2/In0.53Ga0.47As MIS Structures by M. K. Hota, C. Mukherjee, T. Das, and C. K. Maiti ECS Journal of Solid State Science and Technology, vol. 1 (6), pp. N149 (2012)
Graphene oxide-based flexible metal–insulator–metal capacitors by A. Bag, M. K. Hota, S. Mallik and C. K. Maiti Semicond. Sci. Technol., vol. 28, pp. 055002 (2013)
Direct Nanoscale Observation of Resistance Switching with Au nano-dots Embedded Nb2O5 by Scanning Tunneling Microscopy by M. K. Hota, M.K. Bera and C. K. Maiti Nanoscience and Nanotechnology Letters, vol. 4, no.4, pp. 39 (2012)
Frequency dependent dielectric response of HfTaOx based metal-insulator-metal capacitors by M. K. Hota, C. K. Sarkar and C. K. Maiti Semicond. Sci. Technol., vol. 27, pp. 085002 (2012)
Natural Silk Fibroin Protein-based Transparent Bio-memristor by M. K. Hota, M. K. Bera, B. Kundu, S. C. Kundu, and C. K. Maiti Adv. Funct. Mater., vol. 22, 4493-4499 (2012)
Flexible metal-insulator-metal capacitors on polyethylene terephthalate plastic substrates by M. K. Hota, M. K. Bera and C. K. Maiti Semicond. Sci. Technol., vol. 27, pp. 105001 (2012)
Studies on switching mechanisms in Pd-nanodot embedded Nb2O5 memristors using scanning tunneling microscopy by M. K. Hota, M. K. Bera, S. Verma and C. K. Maiti Thin solid films, vol. 520, 6648–665 (2012)

Publications: 2011 - 2012

Atomic layer deposited (TiO2)x(Al2O3)1-x/In0.53Ga0.47As Gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications by C. Mahata, S. Mallik, T. Das, C. K. Maiti, and E. Miranda Applied Physics Letters, 100 pp.062905 (2012)
Interface properties of mixed (TiO2)1-x(Y2O3)x and (Ta2O5)1-x(Y2O3)x (0=x=1) gate dielectrics on sulfur-passivated GaAs by T. Das, C. Mahata, S. Mallik, S. Varma, G. Sutradhar, P.K.Bose, and C. K. Maiti Journal of The Electrochemical Society, 159 pp.H323-H328 (2012)
Degradation and Breakdown Characteristics of Al/HfYOx/GaAs Capacitors by E. Miranda, C. Mahata, T. Das, J. Suñe, C, Maiti Thin Solid Films, 520 pp.2956-2959 (2012)
Sputter-deposited La2O3 on p-GaAs for gate dielectric applications by T. Das, C. Mahata and C. K. Maiti, G. K. Dalapati, C. K. Chia, D. Z. Chi, and S. Y. Chiam, H. L. Seng, G. Sutradhar and P. K. Bose Journal of The Electrochemical Society, 159 pp. G15-G22 (2011)
An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown by E. Miranda, C. Mahata, T. Das, C. K. Maiti Microelectronics Reliability, 51 pp. 1535-1539 (2011)
Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD by G. K. Dalapati, C. K. Chia, C. Mahata, T. Das, C. K. Maiti, M. K. Kumar, H. GaO, S. Y. Chiam, C. C. Tan, C. T. Chua, Y. B. Cheng, and D. Z. Chi Electrochemical and Solid-state Letters, 14 pp.G52-G55 (2011)
Model for leakage current decay in high-field stressed Al/HfYOx/GaAs structures by E. Miranda, C. Mahata, T. Das, C. K. Maiti Microelectronic Engineering, 88 pp.1295-1297 (2011)
i1-xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics by S. Mallik, C. Mahata, M. K. Hota, C. K. Sarkar and C. K. Maiti Thin Solid Films, 520 pp.101-105 (2011)

Publications: 2010 - 2011

Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stac by [1]. C. Mahata, T. Das, S. Mallik, M. K. Hota, and C. K. Maiti Electrochemical and Solid-state Letters, 14, H167-H170 (2011)
Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on Sulfur passivated GaAs by T. Das, C. Mahata, C. K. Maiti, G. Sutradhar, and P. K. Bose Applied Physics Letters, 98, 022901 (2011)
Flatband Voltage Characteristics of Hf-incorporated Y2O3/strained-Si Gate Stacks with Au, Pt and Ni Metal Gates by [3]. C. Mahata, T. Das, S. Mallik, M. K. Hota, S. Varma, and C. K. Maiti Electrochemical and Solid-state Letters, 14, H80-H83 (2011)
Impact of Top (Pt, Au, and Al) Electrodes on HfAlOx-based Metal-Insulator-Metal (MIM) Capacitors by [8]. M. K. Hota, C. Mahata, S. Mallik, C. K. Sarkar and C. K. Maiti Journal of The Electrochemical Society, 158, H44 (2011)
Thermal stability of HfOxNy Gate Dielectrics on p-GaAs Substrates by [9]. T. Das, C. Mahata, G. K. Dalapati, D. Z. Chi, G. Sutradhar, P. K. Bose, C. K. Chia, S. Y. Chiam, J. S. Pan, Z. Zhang, and C. K. Maiti Semiconductor Science and Technology, 25, 125009 (2010)
Paramagnetic Defects and Charge Trapping Behavior of ZrO2 Films Deposited on Germanium by Plasma-Enhanced CVD by C. Mahata, M. K. Bera, P.K. Bose and C. K. Maiti Semiconductor Science and Technology, 24, 025026 (2010)

Publications: 2008 - 2009

High performance TaYOx-based MIM capacitors by C. Mahata, M.K. Bera, M.K. Hota, T. Das, S. Mallik, B. Majhi, S. Verma, P.K. Bose, C.K. Maiti Microelectronic Engineering, in press (2009)
Performance improvement of flash memory using AlN as charge-trapping Layer by P. Chakraborty, S.S. Mahato, T.K. Maiti, M.K. Bera, C. Mahata, S.K. Samanta, A. Biswas, C.K. Maiti Microelectronic Engineering, 86 (2009) 299–302 (2009)
Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayersunderdynamicandACstress by M.K. Bera,C.Mahata,C.K.Maiti Materials ScienceinSemiconductorProcessing, in press (2009)
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers by M.K. Bera, C. Mahata, S. Bhattacharya, A.K. Chakraborty, B.M. Armstrong,H.S. Gamble, C.K. Maiti Applied Surface Science, 255 (2008) 2971–29 (2008)
Reliability of ultra-thin titanium dioxide (TiO2) films on strained-Si by M.K. Bera, C. Mahata, C.K. Maiti Thin Solid Films, 517 (2008) 27–30 (2008)
Charge trapping characteristics in high-k gate dielectrics on germanium by C. Mahata, M.K. Bera, P.K. Bose, C.K. Maiti Thin Solid Films, 517 (2008) 163–166 (2008)
Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge by C. Mahata, M.K. Bera, A.K. Chakraborty, P.K. Bose, C.K. Maiti Microelectronic Engineering, 85 (2008) 2207–221 (2008)

Publications: 2005 - 2006

Rapid Thermal Oxidation of Ge-rich Si1-xGex Heterolayers by M. K. Bera, S. Chakraborty, G. K. Dalapati, S. Chattopadhyay, S. K. Samanta, W. J. Yoo, A. K. Chakraborty, Y. Butenko, L. Šiller, M. R. C. Hunt, S. Saha, and C. K Maiti J. Vac. Sci. Technol. A,, 24, 84-90 (2006)
High frequency characterization and continuum modeling of ultrathin high-k (ZrO2) gate dielectrics on strained-Si by M. K. Bera, S. Chakraborty, S. Saha, D. Paramanik, S. Varma, S. Bhattacharya, and C.K. Maiti Thin Solid Films, 504 183-187 (2006)
Current conduction mechanism in TiO2 gate dielectrics by S. Chakraborty, M. K. Bera, S. Bhattacharya, and C.K. Maiti Microelectronic Engineering, 81, 188-193 (2005)
Determination of the valence band offset and minority carrier lifetime in Ge-rich layers on relaxed-SiGe by S. Chakraborty, M. K. Bera, S. Bhattacharya, P. K. Bose, and C.K. Maiti Thin Solid Films, 504 73-76 (2006)
Analysis of interface states of Al/TiO2/Si0.3Ge0.7 MIS structures using conductance technique by S. Chakraborty, M. K. Bera, P.K. Bose, and C. K. Maiti Semicond. Sci. Technol., 21, 335-340 (2006)
Leakage Current Characteristics and Energy Band Diagram of Al/ZrO2/Si0.3Ge0.7 hetero-MIS structures by S. Chakraborty, M. K. Bera, G. K. Dalapati, D. Paramanik, S. Varma, P. K. Bose, S. Bhattacharya, and C. K. Maiti Semicond. Sci. Technol., 21, 467-472 (2006)
Interface properties of room temperature grown oxides on Si0.15Ge0.85 layers by R. Das, M. K. Bera, S. Chakraborty, A. R. Saha, and C. K. Maiti J. Electrochem. Soc., 153 G511-G514 (2006)

Some Earlier Publications

High quality gate dielectrics grown by rapid thermal processing using split-N₂O technique on strained -Si_{by L. K. Bera, W. K. Choi, C. S. Tan, S. K. Samanta, and C. K. Maiti IEEE Electron Device Lett., 22 PP 387 - 389 (2001)}
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained - Si~~by S. K. Samanta, S. Maikap, L. K. Bera, H. D. Banerjee , and C. K. Maiti Semicond. Sci. Technol., 16 PP 704-707 (2001)~~
~~Deposition of high-k ZrO₂ films on strained SiGe layers using microwave plasma by S. Chatterjee, S. K. Samanta, H. D. Banerjee and C. K. Maiti Electronics Letters, 37 PP 390- 392 (2001)~~
Charge trapping characteristics of ultrathin Oxynitrides on Si/Si_1-x-yGe_xC_y/Si heterolay by S. K. Ray, S. Maikap, S. K. Samanta, S. K. Banerjee and C. K. Maiti Solid-State Electron., 45 PP 1951-1955 (2001)
Metallo-organic compound-based plasma enhanced CVD of ZrO₂ films , for microelectronic applications by S. Chatterjee , S. K. Samanta, H. D. Banerjee and C. K. Maiti Bull. Mater. Sci., 24 PP 579-582 (2001)
Electrical Characteristics of TEOS-based oxynitride Films Deposited by Plasma Enhanced CVD by S. K. Samanta, S. Chatterjee, H. D. Banerjee and C. K.Maiti Processing and Characterisation of Special Materials, PP 186-189 (2001)
~~Minority Carrier Lifetime and Diffusion Length in Si1-x-yGexCy Heterolayers by S. K. Samanta, S. Maikap, S. Chatterjee, and C.K. Maiti Solid-State Electron, 47 PP 893-897 (2003)~~
Structural Characterization and Effects of Annealing on the Electrical Properties of Stacked SiOxNy/Ta2O5 Ultrathin Films on Strained-Si0.82Ge0.18 Substrates by S. Chatterjee, S. K. Samanta, and C. K. Maiti J. Phys. D: Appl. Phys, 36 PP 901-907 (2003)
Investigations on Ta2O5/ZnO Insulator-Semiconductor Interfaces by S. K. Nandi, W. K. Choi, Y. S. Noh, M. S. Oh, S. Maikap, N. M. Hwang, D. Y. Kim, S. Chatterjee, S. K Electron. Lett, 38 PP 1390-1392 (2002)
~~Electrical Properties of Deposited ZrO2 Films on ZnO/n-Si Substrates by S. Chatterjee, S. K. Nandi, S. Maikap, S. K. Samanta, and C. K. Maiti Semicond. Sci. Technol, 18 PP 92-96 (2003)~~
~~Electrical Properties of TiO2 Films Deposited on Strained Si1-yCy Layers by G. K. Dalapati, S. Chatterjee, S. K. Samanta, and C. K. Maiti Electron. Lett, 39 PP 323-324 (2003)~~
~~Electrical Properties of Ta2O5 Gate Dielectric of Strained-Si by C. K. Maiti, S. Chatterjee, G. K. Dalapati, and S. K. Samanta Electron. Lett, 39 PP 497-499 (2003)~~
~~Electrical Characterization of Low Temperature Deposited TiO2 Films on Strained-SiGe Layers by G. K. Dalapati, S. Chatterjee, S. K. Samanta, C. K. Maiti Appl. Surf. Sci, 210 PP 249-254 (2003)~~
Chracteristics of MIS Capacitors Using Ta2O5 Films Deposited on ZnO/ p-Si by Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C. K. Maiti, S. Maikap, W. K. Choi Microelectron. Engineering, 66 PP 637-342 (2003)

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