We are involved in the research and development of semiconductor quantum and heterostructures for nanoscale electronic and photonic devices. Strained Ge alloy films and self-assembled quantum dots are grown by molecular beam epitaxy, sputtering and PLD deposition for silicon photonic devices. Mid infrared photodetectors and floating gate memory devices have been demonstrated using Ge nanocrystals. Silicon nanowires and heterojunction exhibit emission in the telecommunication wavelength and excellent antireflection characteristics. We demonstrated polarization sensitive ultra-high response photodetectors using single Si nanowire. Plasmonic ZnO nanostructures are being studied for multifunctional UV detectors, gas sensors and nano-generators. Currently we are involved on in the integration of 2D materials (graphene, MoS2 and WS2) on Si platforms for large area photonic devices. CMOS compatible gas sensing devices operated at room temperature are being studied using semiconductor nanostructures.
Major research activities of the group are outlined below:
* MBE growth of SiGe heterostructures, quantum wells and quantum dots
* Ge nanocrystals for light emitters and quantum dot memory devices
* Quantum cascade SiGe structures for THz sources and detectors
* Semiconductor nanostructures for photonic and electronic devices
* Si/Ge nanowires and their heterojunctions including single nanowire devices
* ZnO and other II-VI semiconductor nanostructures for sensing, memory and photonic devices
* 2D materials heterostructures on Si platforms
* Strained layer epitaxial growth of Si1-xGe, Si1-yCy and Si1-x-yGexCy films by MBE, UHVCVD and Solid phase epitaxy.
* Ultra-thin and high-k gate dielectric films on strained-Si and strained SiGe layers
* Ferroelectric thin films for memory and sensing applications
-
Solution-Processed Black-Si/Cu2ZnSnS4Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices Singh S., Sarkar A., Goswami D.K., Ray S.K. By ACS Applied Energy Materials - (2021)
-
Metal nanoparticles triggered persistent negative photoconductivity in silk protein hydrogels N. Gogurla, A. K. Sinha, D. Naskar, S.C. Kundu and S. K. Ray By Nanoscale 8 - (2016)
-
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors John J.W., Dhyani V., Singh S., Jakhar A., Sarkar A., Das S., Ray S.K. By Nanotechnology 32 - (2021)
-
A Photoswitchable and Photoluminescent Organic Semiconductor Based On Cationpi and CarboxylatePyridinium Interactions: A Supramolecular Approach S. Roy, S. P. Mondal, S. K. Ray and K.Biradha By Angew. Chem. Int. Ed., 2012 51 - (2012)
-
CdS-Decorated ZnO Nanorod Heterostructures for Improved Hybrid Photovoltaic Devices Tamita Rakshit, Suvra P. Mondal, Indranil Manna, and Samit K. Ray By ACS Appl. Mater. Interfaces 4 - (2012)
-
Invited Topical Review: , Nanocrystals for silicon-based light-emitting and memory devices S. K. Ray, S.Maikap, W Banerjee and S Das By J. Phys. D: Appl. Physics, 46 - (2013)
-
Multifunctional Au-ZnO Plasmonic Nanostructures for Enhanced UV Photodetector and Room Temperature NO Sensing Devices N. Gogurla, A. K.Sinha, S.Santra, S.Manna and S. K. Ray By Scientific Reports (A Nature Publishing Group journal) 4 - (2014)
-
Strained Silicon Heterostructures : Materials and Devices Institution of Electrical Engineers, c2001. IEE circuits, devices and systems series ; no. 12, ISBN. 0852967780 C.K. Maiti, N.B. Chakrabarti and S.K. Ray By IEE Circuits, Devices and Systems Series ; no. 12, - (2001)
-
Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices Sbhrajit Mukherjee, Rishi Maiti, Ajit K. Katiyar, Soumen Das & Samit K. Ray By Scientific Reports (A nature Publishing Group Journal) 6 - (2016)
-
Novel silicon compatible p-WS2 2D/3D heterojunction devices exhibiting broadband photoresponse and superior detectivity Rup K. Chowdhury, Rishi Maiti, Arup Ghorai, Anupam Midya and Samit K. Ray By Nanoscale 8 - (2016)
Principal Investigator
- Deasign and Fabrication of Piezo-phototronic and Tribotronic Devices using Band-engineered Two-dimensional Transition Metal Dichalcogenide Alloys for Self-powered and Mechanical Energy Harvesting Applications Science and Engineering Research Board (SERB)
- Development of Novel Donor-Acceptor Covalent Organic Framework and Covalent Triazine Framework for Broadband and Tunable Photodetctor Devices Science and Engineering Research Board (SERB)
- Emergent Phenomena in 2D Heterostructures Department of Science and Technology (DST)
- Indian Nanoelectronics Users Program-Idea to Innovation (INUP I2I) Ministry of Electronics and Information Technology
Co-Principal Investigator
- Structural characterization by Field Emission gun Scanning Electron Microscopy Department of Metallurgical and Materials Engineering
- Structural Characterization by Field Emission gun Scanning Electron Microscopy (for internal users) Department of Metallurgical and Materials Engineering
Ph. D. Students
Animesh Mandal
Area of Research: Optical properties of 2D heterostructures
Baidyanath Roy
Area of Research: Nanomaterials and senosrs
Deepak Kumar Sahu
Area of Research: Optoelectronic devices
Santu Kumar Ghosh
Area of Research: Magnetic and semiconducting devices
Saranya Das
Area of Research: 2D materials heterostructures for photonic device applications
Saswata Goswami
Area of Research: 2D materials for energy harvesting
Satayender
Area of Research: Organic Electronics
Sayan Chakraborty
Area of Research: Flexible electronic devices
Sayori Biswas
Area of Research: Nanomaterial based devices for biosensing
Shaona Bose
Area of Research: 2D Heterostructures
Subham Saha
Area of Research: Nanoelectronic devices
