Research Areas

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Principal Investigator

  • Indigenous Design and Development of Germanium Oxide-based Next-generation Ultra-Wide Bandgap Semiconductors for Bipolar Electronic Devices Anusandhan National Research Foundation (ANRF)
  • Phase and Bandgap Engineering of III-Oxides in Quest of Interfacial 2DEG Scheme for Transformational and Advanced Research in Sciences (STARS), Ministry of Education (MoE)

Ph. D. Students

Nilanjan Das

Area of Research: Neuromorphic Devices