Electronics and Electrical Communication Engg.

• Best Paper Award, IEEE ICEE
• INSPIRE Fellowship
• Golden Reviewers, IEEE TED
• Gold Medal, M.Tech
• INAE Innovative Project Award

Patent
• Electro-Optical Tracking System for main Rotor Blades alignment in Helicopters by Behl M., Godara S. , Dutta G. - (2025)
Journal
• Extraction Method of 2DEG Charge from Gate-Capacitance Characteristics of Normally-OFF p-GaN/AlGaN/GaN HEMTs by Ahmed N., Dutta G. Journal of Physics D: Applied Physics 58 225106- (2025)
• An Analytical Charge-Based Drain Current Model for Normally-OFF p-GaN/AlGaN/GaN HEMTs by Ahmed N., Abdulsalam A. , Tripathy S. , Dutta G. IEEE Transactions on Electron Devices - (2025)
• Modeling the Impact of Mg Out-Diffusion on Threshold Voltage of p-GaN/AlGaN/GaN HEMT by Ahmed N., Dutta G. IEEE Transactions on Electron Devices 72 135-141 (2025)
• Physics-based Analytical Models for p-GaN/AlGaN/GaN HEMTs Considering Gate Charge Emission by Ahmed N., Dutta G. Journal of Physics D: Applied Physics - (2025)
• Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure by Ahmed N., Dutta G. IEEE Transactions on Electron Devices 71 4093-4101 (2024)
• Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT by Ahmed N., Dutta G. Microelectronics Journal 143 106047- (2024)
• Impact of Device Parameters on the Performance of -Ga2O3 Nanomembrane MESFETs by Sengupta A., Meshram A.D., Bhattacharyya T.K., Dutta G. IEEE Transactions on Electron Devices 71 2557-2564 (2024)
• Design Space of -(AlxGa1-x)2O3/Ga2O3Double Heterojunction Field-Effect Transistors for High-Power Applications by Deo Meshram A., Sengupta A., Bhattacharyya T.K., Dutta G. IEEE Transactions on Electron Devices 71 4860-4866 (2024)
• Normally-Off -(AlxGa1-x) 2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation by Meshram A. D., Sengupta A. , Bhattacharyya T. K., Dutta G. IEEE Transactions on Electron Devices 70 454-460 (2023)
• Realistic nonlocal refrigeration engine based on Coulomb-coupled systems by Barman A., Halder S., Varshney S.K., Dutta G., Singha A. Physical Review E 103 - (2021)
• Dual-gate -Ga2O3 nanomembrane transistors: device operation and analytical modelling by Sengupta A., Bhattacharyya T. K., Dutta G. Journal of Physics D: Applied Physics 54 405103- (2021)
• Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs by Kanaga S., Dutta G. , Kushwah B. , Dasgupta N. , Dasgupta A. IEEE Transactions on Device and Materials Reliability 20 613-621 (2020)
• Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique by Sinha S., Dutta G., Mannam R., DasGupta N., Rao M.S.R. Applied Surface Science 513 - (2020)
• Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique by Sinha S., Dutta G. , Mannam R. , Dasgupta N. , Rao M. Applied Surface Science 513 1-8 (2020)
• On the Threshold Voltage of Normally-OFF AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with p-(Al)GaN gate by Abdulsalam A., Dutta G. Semiconductor Science and Technology 35 1-9 (2020)
• Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor by Abdulsalam A., Karumuri N. , Dutta G. IEEE Transactions on Electron Devices 67 3536-3540 (2020)
• Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling by Dutta G., Dasgupta N. , Dasgupta A. IEEE Transactions on Electron Devices 64 3609-3615 (2017)
• Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs by Dutta G., Dasgupta N. , Dasgupta A. IEEE Transactions on Electron Devices 63 4693-4701 (2016)
• Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs by Dutta G., Dasgupta N. , Dasgupta A. IEEE Transactions on Electron Devices 63 1450-1458 (2016)
• Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC by Shukla M., Dutta G. , Mannam R. , Dasgupta N. Thin Solid Films 607 1-6 (2016)
• A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization by Karumuri N., Dutta G. , Dasgupta N. , Dasgupta A. IEEE Transactions on Electron Devices 63 4226-4232 (2016)
• Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT by Dutta G., Turuvekere S. , Karumuri N. , Dasgupta N. , Dasgupta A. IEEE Electron Device Letters 35 1085-1087 (2014)
Conferences
• Breakdown voltage enhancement techniques in ß-Ga2O3 nanomembrane MESFETs by Sengupta A., Deo Meshram A., Bhattacharyya T.K., Dutta G. Proceedings of CONECCT 2024 - 10th IEEE International Conference on Electronics, Computing and Communication Technologies - (2024)
• ON- and OFF-State Performance of Normally-OFF -(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate by A., ,. , Bhattacharyya T. K., Dutta G. 2023 IEEE 20th India Council International Conference (INDICON) 673-678 (2024)
• ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3MODFETs with p-GaN Gate by Meshram A.D., Sengupta A., Bhattacharyya T.K., Dutta G. 2023 IEEE 20th India Council International Conference, INDICON 2023 673-678 (2023)
• AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric by Kanaga S., Kushwah B. , Dutta G. , Dasgupta N. , Dasgupta A. IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) 1-4 (2018)
• Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric by Kushwah B., Kanaga S. , Dutta G. , Dasgupta A. , Dasgupta N. IEEE International Conference on Emerging Electronics 1-4 (2018)
• Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors by De K., Dutta G. IEEE International Conference on Emerging Electronics 1-5 (2018)
Book Chapter/Section
• AlGaN/GaN HEMT Fabrication and Challenges by Dutta G., Kanaga S. , Dasgupta N. , Dasgupta A. Handbook for III-V High Electron Mobility Transistor Technologies 133-171 (2019)
Workshop
• Effect of Device Parameters on the Threshold Voltage of Normally-OFF AlGaN-channel HEMTs enabled by p-AlGaN Gate by Abdulsalam A., Dutta G. 20th International Workshop on Physics of Semiconductor Devices: IWPSD 2019 - (2019)
• Effect of Field-Plates on Trap induced Current Collapse in AlGaN/GaN High Electron Mobility Transistors by Das S., Dey K. , Singha A. , Dutta G. 20th International Workshop on Physics of Semiconductor Devices: IWPSD 2019 - (2019)
• Low Temperature - High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs (Poster) by Kanaga S., Dutta G. , Kushwah B. , Dasgupta N. , Dasgupta A. International Workshop on Nitride Semiconductors (IWN 2018) - (2018)
• Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy by Khandelwal A., Dutta G. , Dasgupta A. , Dasgupta N. International Workshop on the Physics of Semiconductor and Devices (IWPSD 2017) 219-223 (2017)

Principal Investigator

• Ga2O3 Based Devices for High Power Applications
• Beta-Gallium Oxide Based Nano-Membrane and Bulk Field Effect Transistors

Co-Principal Investigator

• Atomistic to Circuit Modelling of 2D Channel based Spin Logic Gates